Post by kadijaale on Jun 29, 2013 10:18:43 GMT
Gallium nitride specialist Nitronex has developed a family of products based on a new 48V GaN on iilicon process technology. The NPT2000 series of discrete high electron mobility transistors (HEMT) supports power levels of 12, 25, 50 and 100W and is available in plastic and ceramic packages.
Greg Baker, Nitronex' president and ceo, said: "We see many interesting opportunities with our core customer and market base with the 48V ceramic package offering and even more opportunities with the lower cost plastic package line. Our thermally enhanced plastic package will allow us to be very price competitive in new commercial markets for GaN, such as land mobile radio and small-cell base stations."
The new family of products includes the 100W NPT2010 and the 50W NPT2020, both supplied in an AC360 ceramic package, the 12W NPT2018 and the 25W NPT2019, housed in a 3x6 dfn plastic package, and the NPT2021 (50W) and NPT2022 (100W), supplied in TO272 plastic packages.
Samples are available now, with full production scheduled for Q3 of 2013.